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Other articles related with "thin-film transistor"：
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18503 |
Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进) |
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High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack |
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Chin. Phys. B
2023 Vol.32 (1): 18503-018503
[Abstract]
(234)
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[PDF 1005 KB]
(59)
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128105 |
Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生) |
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Degradation mechanisms for polycrystalline silicon thin-film transistors with a grain boundary in the channel under negative gate bias stress |
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Chin. Phys. B
2022 Vol.31 (12): 128105-128105
[Abstract]
(257)
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[PDF 879 KB]
(184)
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88101 |
Tianyuan Song(宋天源), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Qi Shan(单奇) |
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Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases |
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Chin. Phys. B
2022 Vol.31 (8): 88101-088101
[Abstract]
(349)
[HTML 1 KB]
[PDF 813 KB]
(107)
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118102 |
Jianing Guo(郭佳宁), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生) |
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Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress |
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Chin. Phys. B
2021 Vol.30 (11): 118102-118102
[Abstract]
(423)
[HTML 0 KB]
[PDF 1026 KB]
(59)
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118101 |
Yalan Wang(王雅兰), Mingxiang Wang(王明湘), Dongli Zhang(张冬利), and Huaisheng Wang(王槐生) |
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A systematic study of light dependency of persistent photoconductivity in a-InGaZnO thin-film transistors |
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Chin. Phys. B
2020 Vol.29 (11): 118101-
[Abstract]
(513)
[HTML 1 KB]
[PDF 951 KB]
(176)
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78503 |
Mei-Na Zhang(张美娜), Yan Shao(邵龑), Xiao-Lin Wang(王晓琳), Xiaohan Wu(吴小晗), Wen-Jun Liu(刘文军), Shi-Jin Ding(丁士进) |
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Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels |
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Chin. Phys. B
2020 Vol.29 (7): 78503-078503
[Abstract]
(559)
[HTML 0 KB]
[PDF 945 KB]
(117)
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88503 |
Mei-Na Zhang(张美娜), Yan Shao(邵龑), Xiao-Lin Wang(王晓琳), Xiaohan Wu(吴小晗), Wen-Jun Liu(刘文军), Shi-Jin Ding(丁士进) |
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Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels |
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Chin. Phys. B
0 Vol. (): 88503-088503
[Abstract]
(90)
[HTML 0 KB]
[PDF 818 KB]
(87)
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17303 |
Dong Zhang(张东), Chenfei Wu(武辰飞), Weizong Xu(徐尉宗), Fangfang Ren(任芳芳), Dong Zhou(周东), Peng Yu(于芃), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海) |
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Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors |
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Chin. Phys. B
2019 Vol.28 (1): 17303-017303
[Abstract]
(719)
[HTML 1 KB]
[PDF 528 KB]
(200)
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48504 |
Xu-Yang Li(栗旭阳), Zhi-Nong Yu(喻志农), Jin Cheng(程锦), Yong-Hua Chen(陈永华), Jian-She Xue(薛建设), Jian Guo(郭建), Wei Xue(薛唯) |
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Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures |
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Chin. Phys. B
2018 Vol.27 (4): 48504-048504
[Abstract]
(673)
[HTML 1 KB]
[PDF 4283 KB]
(226)
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47307 |
Yong-Hui Zhang(张永晖), Zeng-Xia Mei(梅增霞), Hui-Li Liang(梁会力), Xiao-Long Du(杜小龙) |
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Review of flexible and transparent thin-film transistors based on zinc oxide and related materials |
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Chin. Phys. B
2017 Vol.26 (4): 47307-047307
[Abstract]
(743)
[HTML 1 KB]
[PDF 7052 KB]
(1745)
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57306 |
Chen-Fei Wu(武辰飞), Yun-Feng Chen(陈允峰), Hai Lu(陆海), Xiao-Ming Huang(黄晓明), Fang-Fang Ren(任芳芳), Dun-Jun Chen(陈敦军), Rong Zhang(张荣), You-Dou Zheng(郑有炓) |
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Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy |
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Chin. Phys. B
2016 Vol.25 (5): 57306-057306
[Abstract]
(716)
[HTML 1 KB]
[PDF 654 KB]
(564)
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108504 |
Wu Shao-Hang (吴绍航), Zhang Nan (张楠), Hu Yong-Sheng (胡永生), Chen Hong (陈红), Jiang Da-Peng (蒋大鹏), Liu Xing-Yuan (刘星元) |
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Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors |
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Chin. Phys. B
2015 Vol.24 (10): 108504-108504
[Abstract]
(710)
[HTML 1 KB]
[PDF 722 KB]
(292)
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77307 |
Qian Hui-Min (钱慧敏), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Tang Lan-Feng (汤兰凤), Zhou Dong (周东), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Liao (郑有炓), Huang Xiao-Ming (黄晓明) |
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Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors |
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Chin. Phys. B
2015 Vol.24 (7): 77307-077307
[Abstract]
(664)
[HTML 1 KB]
[PDF 552 KB]
(471)
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68501 |
Liu Yu-Rong (刘玉荣), Su Jing (苏晶), Lai Pei-Tao (黎沛涛), Yao Ruo-He (姚若河) |
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Positive gate-bias temperature instability of ZnO thin-film transistor |
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Chin. Phys. B
2014 Vol.23 (6): 68501-068501
[Abstract]
(741)
[HTML 1 KB]
[PDF 445 KB]
(924)
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26101 |
Chen Yong-Yue (陈勇跃), Wang Xiong (王雄), Cai Xi-Kun (才玺坤), Yuan Zi-Jian (原子健), Zhu Xia-Ming (朱夏明), Qiu Dong-Jiang (邱东江), Wu Hui-Zhen (吴惠桢) |
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Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor |
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Chin. Phys. B
2014 Vol.23 (2): 26101-026101
[Abstract]
(657)
[HTML 1 KB]
[PDF 1013 KB]
(1153)
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3990 |
Yuan Guang-Cai(袁广才), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Xu Na(许娜), Tian Xue-Yan(田雪雁), and Xu Xu-Rong(徐叙瑢) |
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Study on characteristics of a double-conductible channel organic thin-films transistor with an ultra-thin hole-blocking layer |
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Chin. Phys. B
2009 Vol.18 (9): 3990-3994
[Abstract]
(1562)
[HTML 1 KB]
[PDF 406 KB]
(707)
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1887 |
Yuan Guang-Cai(袁广才), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Jiang Wei-Wei(姜薇薇), Song Dan-Dan(宋丹丹), Zhu Hai-Na(朱海娜), Li Shao-Yan(李少彦), Huang Jin-Ying(黄金英), Huang Hao(黄豪), and Xu Xu-Rong(徐叙瑢) |
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Characteristics of pentacene organic thin film transistor with top gate and bottom contact |
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Chin. Phys. B
2008 Vol.17 (5): 1887-1892
[Abstract]
(1457)
[HTML 1 KB]
[PDF 269 KB]
(964)
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3822 |
Yuan Guang-Cai(袁广才), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Huang Jin-Zhao(黄金昭), Huang Jin-Ying (黄金英), Tian Xue-Yan(田雪雁), and Xu Xu-Rong (徐叙瑢) |
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The effect of annealing temperature and film thickness on the phase of pentacene on the p+-Si substrate |
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Chin. Phys. B
2008 Vol.17 (10): 3822-3826
[Abstract]
(1222)
[HTML 1 KB]
[PDF 1006 KB]
(542)
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